The influence of Co doping on the dielectric, ferroelectric and ferromagnetic properties of Ba0.70Sr0.30TiO3 thin films
The influence of Co doping on the dielectric, ferroelectric and ferromagnetic properties of Ba0.70Sr0.30TiO3 thin films
复制标题
DOI：
10.1016/j.apsusc.2008.11.064
复制
发表时间：
2009-02
影响因子：
6.7
通讯作者：
Lina Gao;J. Zhai;X. Yao
中科院分区：
文献类型：
--
作者：
Lina Gao;J. Zhai;X. Yao
采用溶胶-凝胶法在铂/钛/二氧化硅/硅衬底上制备了掺钴Ba0.70Sr0.30TiO3(BST)薄膜。微观结构、介电性能、铁电性能、铁磁性能与Co含量有很强的相关性。通过调节Co的浓度，BST薄膜的介电常数可以在343~119之间调节。在500KV/cm的直流电场下，薄膜的介电损耗仍保持在0.020以下，可调谐性在30%以上。当Co掺杂量增加到10mol%时，发现铁磁性和铁电性共存。这种薄膜具有合适的介电常数、较低的介电损耗和较高的可调谐性，具有潜在的调谐应用前景。
Ba0.70Sr0.30TiO3(BST) thin films doped by Co (BSTC) are fabricated by sol–gel method on a Pt/Ti/SiO2/Si substrate. A strong correlation is observed among the microstructure, dielectric, ferroelectric, ferromagnetic properties and Co concentration. The dielectric constant of BST thin films can be tailored from 343 to 119 by manipulating the Co concentration. The dielectric loss of BSTC thin films are still kept below 0.020 and the tunability is above 30% at a dc-applied electric field of 500kV/cm. With increasing Co doping up to 10mol%, the coexistence of ferromagnetism and ferroelectrics is found. Suitable dielectric constant, low-dielectric loss, and high tunability of this kind of thin films can be useful for potential tunable applications.