Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources.
Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources.
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DOI：
10.1364/oe.19.000193
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发表时间：
2011-01
期刊：
影响因子：
3.8
通讯作者：
R. Sobierajski;S. Bruijn;A. Khorsand;Eric Louis;R. Kruijs;T. Burian;J. Chalupský;J. Cihelka;A. Gleeson;Justyna Grzonka;E. Gullikson;V. Hájková;S. Hau-Riege;L. Juha;M. Jurek;D. Klinger;J. Krzywiński;R. A. London;J. Pelka;T. Płociński;M. Rasinski;K. Tiedtke;S. Toleikis;L. Vyšín;H. Wabnitz;F. Bijkerk
中科院分区：
文献类型：
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作者：
R. Sobierajski;S. Bruijn;A. Khorsand;Eric Louis;R. Kruijs;T. Burian;J. Chalupský;J. Cihelka;A. Gleeson;Justyna Grzonka;E. Gullikson;V. Hájková;S. Hau-Riege;L. Juha;M. Jurek;D. Klinger;J. Krzywiński;R. A. London;J. Pelka;T. Płociński;M. Rasinski;K. Tiedtke;S. Toleikis;L. Vyšín;H. Wabnitz;F. Bijkerk
我们研究了MoN/SiN多层膜XUV光学器件在两种极端条件下的损伤机制：热退火和来自Hamburg-FLASH自由电子激光装置的单次强XUV脉冲辐照。通过X射线衍射、干涉偏光显微镜、原子力显微镜和扫描透射电子显微镜研究了损伤的“事后”。虽然损伤过程的时间尺度和损伤阈值温度不同（在退火的情况下，它是Mo 2N的解离温度，在XUV照射的情况下，它是MoN的熔化温度），但主要的损伤机制非常相似：分子解离和N2的形成，导致多层结构内部的气泡。
We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N2, leading to bubbles inside the multilayer structure.