Two-step vapor transport deposition of large-size bridge-like Bi2Se3 nanostructures
Two-step vapor transport deposition of large-size bridge-like Bi2Se3 nanostructures
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大尺寸桥状Bi2Se3纳米结构的两步气相传输沉积
DOI：
10.1039/c5ce01329a
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发表时间：
2015
期刊：
影响因子：
3.1
通讯作者：
Liu Yichun
中科院分区：
文献类型：
--
作者：
Han Manshu;Ma Jiangang;Xu Haiyang;Liu Yichun
本文采用物理气相沉积法生长了Bi_2Se_3单晶纳米结构，包括纳米线、纳米带、纳米片和桥状纳米结构。通过研究Bi2Se3纳米结构的形貌演化，我们发现长轴沿着的Bi2Se3纳米带有利于桥状纳米结构的形成。随后，人们开发了两步生长工艺，有效地增加了桥状Bi2Se3纳米结构的尺寸和数量，这对于实现各种光电和自旋电子应用的大尺寸二维材料的生长显示出巨大的希望。
In this paper, single crystalline Bi2Se3 nanostructures including nanowires, nanoribbons, nanoplates and bridge-like nanostructures have been grown by physical vapor deposition. By investigating the morphological evolution of the Bi2Se3 nanostructures, we found that Bi2Se3 nanoribbons with the long axis along could facilitate the formation of bridge-like nanostructures. Subsequently, a two-step growth process had been developed to increase both the size and the amount of the bridge-like Bi2Se3 nanostructures effectively, which shows great promise to realize the growth of large-size two-dimensional materials for various optoelectronic and spintronic applications.