Large grain growth of Ge-rich Ge1-xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water
Large grain growth of Ge-rich Ge1-xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water
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DOI：
10.1063/1.4864627
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发表时间：
2014-02-10
影响因子：
4
通讯作者：
Zaima, Shigeaki
中科院分区：
文献类型：
--
作者：
Kurosawa, Masashi;Taoka, Noriyuki;Zaima, Shigeaki
研究了Sn掺杂对富锗Ge_（1-x）Sn_x（x）晶体生长特性的影响
We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x