Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching
Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching
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中性束刻蚀制备的 Si0.8Ge0.2/Si 纳米柱光致发光尺寸效应的室温观察
DOI：
10.1143/apex.5.082004
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发表时间：
2012
影响因子：
2.3
通讯作者：
Rii Hirano
中科院分区：
文献类型：
--
作者：
Futoshi Nishimoto;Satoshi Kaneko;Jiang Honwei;Satoshi Yokoyama;Junko Okumura;Megumi Sato;Tiengkham Pongvongsa;Jun Kobayashi;Daisuke Nonaka;Akiko Sato;Kazuhiko Moji;Sengchanh Kounnavong;Rii Hirano
我们报告了在室温下观察到 SiGe/Si 双量子阱纳米柱整体光致发光的清晰尺寸效应。包含两个 3 nm 厚的 Si 0.8 Ge 0.2 层的硅薄层（～ 100 nm）被蚀刻成垂直站立在 200 nm 厚的绝缘体上硅层上的～ 100 nm 高的纳米柱的整体。当纳米柱的平均直径在 18 至 24 nm 之间变化时，观察到在 1.8 eV 左右出现光致发光峰位置的明显变化。
We report the room-temperature observation of clear size effects in photoluminescence of ensembles of SiGe/Si double-quantum-well nanocolumns. A silicon thin layer (∼ 100 nm) containing two 3-nm-thick Si 0.8 Ge 0.2 layers was etched into an ensemble of∼ 100 nm tall nanocolumns standing vertically on the 200-nm-thick silicon-on-insulator layer. A clear shift of photoluminescence peak positions appearing at around 1.8 eV has been observed with varying average diameter of the nanocolumns between 18 and 24 nm.