Influence of hetero-interfaces on photovoltaic performance in solar cells based on ZnSnP 2 bulk crystal
Influence of hetero-interfaces on photovoltaic performance in solar cells based on ZnSnP 2 bulk crystal
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异质界面对基于ZnSnP 2 块状晶体的太阳能电池光伏性能的影响
DOI：
10.1109/pvsc.2017.8366583
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Y. Nose
中科院分区：
文献类型：
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作者：
S. Nakatsuka;S. Akari;Jakapan Chantana;T. Minemoto;Y. Nose
采用Sn助熔剂法制备了无稀有金属的ZnSnP 2块体晶体，并以此制备了太阳能电池。结果表明，在CBD工艺前对ZnSnP 2块体晶体进行王水刻蚀，去除了机械抛光形成的晶体中的缺陷层。随后，我们报告说，大约2%的转换效率实现与Al/AZO/ZnO/CdS/ZnSnP 2 /Cu的结构，其中的值Jsc，Voc和FF分别为8.2 mA cm−2，0.452 V和0.533。Voc值很低，考虑到ZnSnP 2的带隙值，~ 1.6eV。为了提高高转换效率，从能带对准的角度来看，缓冲层材料的优化被认为是必不可少的。
We fabricated solar cells using rare-metal-free ZnSnP 2 bulk crystals prepared by Sn flux method. It was clarified that the aqua regia etching of ZnSnP 2 bulk crystals before CBD process removed the defect layer in the crystal formed by mechanical polishing. Subsequently, we report that the conversion efficiency of approximately 2 % was achieved with the structure of Al/AZO/ZnO/CdS/ZnSnP 2 /Cu, where the values of Jsc, Voc and FF were 8.2 mA cm−2, 0.452 V and 0.533, respectively. Voc value was largely low, considering the bandgap value of ZnSnP 2 , ~1.6 e V. In order to improve the high conversion efficiency, the optimization of buffer layer material is considered to be essential in the viewpoint of the band alignment.