A valley-filtering switch based on strained graphene
A valley-filtering switch based on strained graphene
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DOI：
10.1088/0953-8984/23/38/385302
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发表时间：
2011-09
期刊：
影响因子：
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通讯作者：
F. Zhai;Yanling Ma;Ying-Tao Zhang
中科院分区：
文献类型：
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作者：
F. Zhai;Yanling Ma;Ying-Tao Zhang
我们调查谷依赖运输通过石墨烯片调制的衬底应变和边缘场的两个平行的铁磁金属（FM）条纹。当两个FM条纹的磁化方向由平行变为反平行时，在很宽的费米能级范围内，总电导、谷极化和谷电导过剩都发生了很大的变化，这是由于谷相关的透射抑制与非均匀磁场的极性结构有关.因此，所提出的结构表现出谷滤波开关和磁阻器件的显著特征。
We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.