Electrodeposition and growth mechanism of SnSe thin films
Electrodeposition and growth mechanism of SnSe thin films
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DOI：
10.1016/j.apsusc.2010.10.096
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发表时间：
2011-01
影响因子：
6.7
通讯作者：
M. Bicer;İlkay Şişman
中科院分区：
文献类型：
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作者：
M. Bicer;İlkay Şişman
在室温 (25°C) 下，从含有 SnCl2、Na2SeO3 和 EDTA 的水溶液中，将硒化锡 (SnSe) 薄膜电化学沉积到 Au(111) 基底上。通过循环伏安法探讨了 Sn 和 Se 的电化学行为和共沉积电位。采用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、能量色散光谱 (EDS) 和紫外可见吸收光谱来表征薄膜。当电沉积电位升高时，薄膜中Se含量降低。结果发现，在-0.50V电压下可以获得化学计量的SnSe薄膜。沉积薄膜沿（111）面择优取向结晶。随着沉积电位的增加，SnSe 薄膜的形貌可以从球形颗粒转变为片状颗粒。 SEM 研究表明，薄膜的生长是通过成核、薄膜层的生长以及薄膜覆盖层上针状颗粒的形成来进行的。光学吸收研究表明该薄膜具有直接跃迁，带隙能为1.3eV。
Tin selenide (SnSe) thin films were electrochemically deposited onto Au(111) substrates from an aqueous solution containing SnCl2, Na2SeO3, and EDTA at room temperature (25°C). The electrochemical behaviors and the codeposition potentials of Sn and Se were explored by cyclic voltammetry. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and UV–vis absorption spectroscopy were employed to characterize the thin films. When the electrodeposition potential increased, the Se content in the films decreased. It was found that the stoichiometric SnSe thin films could be obtained at −0.50V. The as-deposited films were crystallized in the preferential orientation along the (111) plane. The morphologies of SnSe films could be changed from spherical grains to platelet-like particles as the deposition potential increases. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of needle-like particles on the overlayer of the film. The optical absorption study showed the film has direct transition with band gap energy of 1.3eV.