XOR-CiM: An Efficient Computing-in-SOT-MRAM Design for Binary Neural Network Acceleration

XOR-CiM: An Efficient Computing-in-SOT-MRAM Design for Binary Neural Network Acceleration
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DOI:
10.1109/isqed57927.2023.10129322
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发表时间:
2023-04
期刊:
2023 24th International Symposium on Quality Electronic Design (ISQED)
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通讯作者:
Mehrdad Morsali;Ranyang Zhou;Sepehr Tabrizchi;A. Roohi;Shaahin Angizi
Mehrdad Morsali;Ranyang Zhou;Sepehr Tabrizchi;A. Roohi;Shaahin Angizi
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文献类型:
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作者:
Mehrdad Morsali;Ranyang Zhou;Sepehr Tabrizchi;A. Roohi;Shaahin Angizi

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在这项工作中,我们利用自旋轨道扭矩磁随机存取存储器(SOT-MRAM)的单极开关特性,开发了一个高效的数字内存计算(CIM)平台XOR-CIM。XOR-CIM将典型的MRAM子阵转换为具有超高带宽的大规模并行计算核,大大降低了处理卷积层的能量消耗,并加速了X(N)OR密集型二进制神经网络(BNN)的推理。与目前基于∼的CIM平台相比,XOR-CIM的推理精度与数字CIMS相似,能效和加速分别提高了4.5倍和1.8倍。
In this work, we leverage the uni-polar switching behavior of Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) to develop an efficient digital Computing-in-Memory (CiM) platform named XOR-CiM. XOR-CiM converts typical MRAM sub-arrays to massively parallel computational cores with ultra-high bandwidth, greatly reducing energy consumption dealing with convolutional layers and accelerating X(N)OR-intensive Binary Neural Networks (BNNs) inference. With a similar inference accuracy to digital CiMs, XOR-CiM achieves ∼4.5× and 1.8× higher energy-efficiency and speed-up compared to the recent MRAM-based CiM platforms.