Electronic properties and strain sensitivity of CVD-grown graphene with acetylene
Electronic properties and strain sensitivity of CVD-grown graphene with acetylene
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DOI：
10.7567/jjap.55.04ep05
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发表时间：
2016-04-01
影响因子：
1.5
通讯作者：
Miura, Hideo
中科院分区：
文献类型：
--
作者：
Yang, Meng;Sasaki, Shinichirou;Miura, Hideo
尽管许多研究表明，可以使用甲烷气体通过化学气相沉积（CVD）来形成大面积单层石墨烯，但使用高反应性乙炔气体生长单层石墨烯仍然是一个巨大的挑战。在这项研究中，我们通过乙炔气低压CVD（LPCVD）合成了均匀的单层石墨烯薄膜。根据拉曼光谱测量，发现高达 95% 的生长石墨烯是单层的。通过测试制造的场效应晶体管 (FET) 和应变传感器，还评估了用乙炔 LPCVD 生长的石墨烯的电子特性和应变灵敏度。得出的载流子迁移率和应变系数分别为 862-1150 cm(2)/(V.s) 和 3.4，揭示了高速 FET 和应变传感器应用的潜力。我们还研究了电子特性与石墨烯域尺寸之间的关系。 (C) 2016 日本应用物理学会
Although many studies have shown that large-area monolayer graphene can be formed by chemical vapor deposition (CVD) using methane gas, the growth of monolayer graphene using highly reactive acetylene gas remains a big challenge. In this study, we synthesized a uniform monolayer graphene film by low-pressure CVD (LPCVD) with acetylene gas. On the base of Raman spectroscopy measurements, it was found that up to 95% of the as-grown graphene is monolayer. The electronic properties and strain sensitivity of the LPCVD-grown graphene with acetylene were also evaluated by testing the fabricated field-effect transistors (FETs) and strain sensors. The derived carrier mobility and gauge factor are 862-1150 cm(2)/(V.s) and 3.4, respectively, revealing the potential for high-speed FETs and strain sensor applications. We also investigated the relationship between the electronic properties and the graphene domain size. (C) 2016 The Japan Society of Applied Physics