Ionizing radiation effect on metal–ferroelectric–insulator–semiconductormemory capacitors
Ionizing radiation effect on metal–ferroelectric–insulator–semiconductormemory capacitors
复制标题
金属-铁电体-绝缘体-半导体存储电容器的电离辐射效应
DOI：
10.1088/0268-1242/30/8/085020
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Y C Zhou
中科院分区：
文献类型：
--
作者：
S A Yan;G Li;W Zhao;H X Guo;Y Xiong;M H Tang;Z Li;Y G Xiao;W L Zhang;Z F Lei;Y C Zhou
建立了一个理论模型，研究了电离辐射对金属-铁电-绝缘体-半导体（MFIS）结构电容器在辐照和辐照后的电学特性的影响。该模型考虑了铁电层、氧化层和二氧化硅界面的辐射退化，并考虑了硅衬底的辐射效应，以适应剂量率效应。模拟结果表明，随着总剂量的增加，电容-外加电压（C-V）曲线和表面电位-外加电压（Φ S（Si）-V）曲线均发生明显偏移，记忆窗口变差。结果表明，随着辐照剂量的增加，极化-外加电压（P-V）曲线的对称性降低，这可能解释了辐照疲劳和压痕现象。这些结果可以提供一些见解的MFIS结构器件的辐射引起的退化的估计，并可以集成到电子设计自动化（EDA）软件的电离辐射效应模拟。
A theoretical model was developed to investigate the ionizing radiation effect on the electrical characteristics of metal–ferroelectric–insulator–semiconductor (MFIS) structure capacitors under exposure to radiation and under post-irradiation conditions. In this model, the radiation-induced degradation in the ferroelectric layer, oxide layer and silicon dioxide interface were considered, and the radiation effect of the silicon substrate was also taken into account to accommodate the dose rate effect. The modeling results showed that both the capacitance versus applied voltage (C–V) curves and the surface potential versus applied voltage (Φ S (Si)–V) curves shifted significantly and the memory window became worse with increasing total dose. Moreover, the derived results indicated that the symmetry of the polarization versus applied voltage (P–V) curves degraded with the increase in total dose, which may explain the phenomena of radiation-induced fatigue and imprint. These results can provide some insights into the estimation of the radiation-induced degradation of MFIS structure devices and may be integrated into electronic design automation (EDA) software for ionizing radiation effect simulation.