Dry etch release processes for micromachining applications
Dry etch release processes for micromachining applications
复制标题
用于微机械加工应用的干法蚀刻释放工艺
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Cheung
中科院分区：
文献类型：
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作者：
T. Zhu;P. Argyrakis;E. Mastropaolo;K. K. Lee;R. Cheung
作者报告了两种干法刻蚀工艺的比较研究多晶硅牺牲层释放气相二氟化氙（XeF2）连续蚀刻和电感耦合等离子体（ICP）蚀刻与六氟化硫（SF6）气体。在0.5 μ m厚的多晶硅测试结构上进行了图形化，并成功地制作了宽度从1 μ m到500 μ m的腐蚀通道，以供比较。研究了刻蚀压力、孔径尺寸和ICP刻蚀功率对底切刻蚀速率以及掩模与衬底选择比的影响。在3Torr的XeF_2刻蚀气压下，可以获得高达11.6 μ m的底切刻蚀速率，而在65mTorr的SF_6等离子体中，得到了2.56 μ m的底切刻蚀速率。此外，优化的工艺已被用于碳化硅（SiC）谐振器的制造。
The authors report on the comparative study of two dry etch processes for polysilicon sacrificial layer release using vapor phase xenon difluoride (XeF2) continuous etching and inductively coupled plasma (ICP) etching with sulfur hexafluoride (SF6) gas. Test structures of 0.5μm thick polysilicon have been patterned and etch channels varying in widths from 1to500μm have been fabricated successfully for the purpose of comparison. The influence of etch pressure, aperture opening size, and ICP etch power on the undercut etching rate as well as selectivity between mask and substrate have been studied. It has been possible to achieve an undercut etch rate of up to 11.6μm∕min under a pressure of 3Torr in XeF2 etch gas, while for SF6 plasma, an undercut etch rate of 2.56μm∕min at 65mTorr is obtained. Moreover, the optimized process has been employed for the fabrication of silicon carbide (SiC) resonators.