Effect of dynamic adjustment of diamond tools on nano-cutting behavior of single-crystal silicon
Effect of dynamic adjustment of diamond tools on nano-cutting behavior of single-crystal silicon
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DOI：
10.1007/s00339-019-2436-9
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发表时间：
2019-03
期刊：
影响因子：
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通讯作者：
M. Wang;S. You;F. Wang;Qi Liu
中科院分区：
文献类型：
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作者：
M. Wang;S. You;F. Wang;Qi Liu
采用一种通过改变刀具位置来调节刀具前角和后角的新方法，利用分子动力学模拟对单晶硅的纳米切削行为进行了动态研究。在相同的切削条件下，使用刀具摆动到-10 °、-15 °、-20 °、-25 °、-30 °、-35 °和-45 °六个不同的前角进行模拟。通过与SW势函数的比较，讨论了Tersoff势函数的优点。研究了纳米切削过程中的配位数、von Mises应力、静水应力、系统温度、势能和切削力。统计分析结果表明，在调整角为− 25 °时，硅原子的配位数最小，平均静应力最大。此外，系统势能和温度最大值也是在− 20 °后的− 25 °调节角（可以定义为− 15 °后的较大调节角）处获得的。此外，研究结果还指出，平均切向力最大值出现在− 25 °处，这与以往的研究结果不同。
A new method for adjusting the tool rake and flank angles by changing the position of the tools was used to dynamic explore the nano-cutting behavior of single-crystal silicon using MD simulation. Simulations under the same cutting conditions were carried out using a tool swinging to six different rake angles of − 10°, − 15°, − 20°, − 25°, − 30°, − 35°, and − 45°. The advantages of Tersoff potential function are discussed in comparison with those of using SW potential function. The coordination number, von Mises stress, hydrostatic stress, system temperature, potential energy and cutting force during the nano-cutting process are studied. The results of a statistical study reveal that the coordination numbers of silicon atoms showed a minimum value and the highest average hydrostatic stress at − 25° adjustment angle. Besides, the maximum system potential energy and temperature is also obtained at an adjustment angle of − 25° after − 20° (it can be defined as a larger adjustment angle after − 15°). In addition, the results also point out that the highest average tangential force was observed at − 25°, which is different from the previous researches.