Toshihiko Sato, Akihiro Kono and Toshio Goto: "Level excitation cross sections of Si I fragments produced by 100 eV electron impact on <SiH_4> " Journal of Chemical Physics (to be published). (1987)
Toshihiko Sato, Akihiro Kono and Toshio Goto: "Level excitation cross sections of Si I fragments produced by 100 eV electron impact on <SiH_4> " Journal of Chemical Physics (to be published). (1987)
复制标题
Toshihiko Sato、Akihiro Kono 和 Toshio Goto:“100 eV 电子撞击 <SiH_4> 产生的 Si I 碎片的能级激发截面”《化学物理杂志》(待出版)。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: