High temperature operation of AlGaN/GaN HEMT
High temperature operation of AlGaN/GaN HEMT
复制标题
AlGaN/GaN HEMT 的高温运行
DOI：
10.1109/mwsym.2005.1516642
复制
发表时间：
2005
期刊：
影响因子：
--
通讯作者：
S. Sano
中科院分区：
文献类型：
--
作者：
N. Adachi;Y. Tateno;S. Mizuno;A. Kawano;J. Nikaido;S. Sano
我们研究了AlGaN/GaN hemt的高温操作。在通道温度为269℃时，在2.14 GHz、低于50 V的工作条件下，实现了12.3 dB的线性增益和53.6%的功率增益。这些性能足以用于实际应用。在通道温度为368℃时，线性增益为10.4 dB，功率增加效率为43.9%。我们还研究了等效电路值的温度依赖性，发现饱和输出功率和线性增益的温度依赖性源于通道中电子速度的温度依赖性。
We investigated high temperature operation of AlGaN/GaN HEMTs. At channel temperature of 269 degC, a linear gain of 12.3 dB and a power added efficiency of 53.6% were achieved at 2.14 GHz, less than 50 V operations. These are sufficient performance to practical application. At channel temperature of 368 degC, the linear gain was 10.4 dB and a power added efficiency of 43.9% was achieved. We also investigated the temperature dependence of equivalent circuit values, and found that the temperature dependence of saturated output power and the linear gain is originated from the temperature dependence of electron velocity in the channel.