7F-1 Design of Band-Stop Filters Using PZT Layer On Silicon Substrate Phononic Crystals

7F-1 Design of Band-Stop Filters Using PZT Layer On Silicon Substrate Phononic Crystals
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DOI：
10.1109/ultsym.2007.161
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发表时间：
2007-12
期刊：
2007 IEEE Ultrasonics Symposium Proceedings
影响因子：
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通讯作者：
A. Hladky-Hennion;J. Vasseur;B. Dubus;F. Duval;B. Morvan
A. Hladky-Hennion;J. Vasseur;B. Dubus;F. Duval;B. Morvan
中科院分区：
其他
文献类型：
--
作者：
A. Hladky-Hennion;J. Vasseur;B. Dubus;F. Duval;B. Morvan

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研究了在硅衬底上沿厚度极化的周期性PZT层和交叉电极（IDE）构成的用于发射/接收导弹性波的阻带滤波器的实现。通过有限元模拟对滤波器特性进行了理论上的评价：计算了给定图形几何形状下PZT层的色散曲线，得到了绝对带隙。然后对整个结构进行建模，并使用适当的IDE在压电层中传播导模。最后，对该结构的滤波性能进行了评价。
The realization of a stop-band filter constituted by a periodically patterned PZT layer, polarized along thickness, on silicon substrate and interdigitated electrodes (IDE) for emission/reception of guided elastic waves, is investigated. The filter characteristics are theoretically evaluated by using finite element simulations: dispersion curves of patterned PZT layer are computed for a given pattern geometry to obtain the absolute band gap. Complete structure is then modelled, with appropriate IDE to propagate a guided mode in the piezoelectric layer. Finally, filtering capability of the structure is evaluated.