Stability of Ionic Liquid-Gated Metal Oxides and Transistors
Stability of Ionic Liquid-Gated Metal Oxides and Transistors
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DOI：
10.1109/ted.2014.2308141
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发表时间：
2014-03
影响因子：
3.1
通讯作者：
S. Bubel;S. Meyer;M. Chabinyc
中科院分区：
文献类型：
--
作者：
S. Bubel;S. Meyer;M. Chabinyc
离子液体（IL）及其凝胶被认为是低电压和灵活的设备，由于其易于处理，在设备设计的自由度，并在低偏置电压下实现高静电场。如果IL门控装置在其个别化合物的电化学稳定偏压下操作，则认为它们是可靠的。然而，小的不稳定性在界面处的非晶氧化物半导体可能会导致二次不稳定性，甚至分解的金电极，在本文中所示的情况下，含氰基阴离子。
Ionic liquids (ILs) and their gels are considered for low-voltage and flexible devices due to their ease of processing, freedom in device design, and the realization of high electrostatic fields at low bias voltages. If IL-gated devices are operated at electrochemically stable biases of their individual compounds, they are believed to be reliable. However, small instabilities at interfaces to amorphous oxide semiconductors can lead to secondary instabilities and even the decomposition of gold electrodes, in this paper shown for the case of cyano containing anions.