Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging
Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging
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DOI：
10.1063/1.2709630
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发表时间：
2007-02
影响因子：
4
通讯作者：
T. Trupke;E. Pink;R. Bardos;M. Abbott
中科院分区：
文献类型：
--
作者：
T. Trupke;E. Pink;R. Bardos;M. Abbott
演示了从发光图像快速确定硅太阳能电池的空间分辨串联电阻。通过Corescan测量定性地以及通过与从电池终端特性获得的总串联电阻进行比较定量地证实了从工业丝网印刷硅太阳能电池的发光图像确定的串联电阻的强烈横向变化。与测量空间分辨串联电阻的现有技术相比，发光成像具有无损且快几个数量级的优势。© 2007美国物理学会。DOI: 10.1063/1.2709630
硅太阳能电池的串联电阻通常表现出强烈的横向变化，特别是在工业丝网印刷电池中。量化这种变化的实验技术包括Corescan、1 Cello、2以及基于暗场和光照红外锁相热成像（LIT）的成像技术。3,4这些技术每个太阳能电池需要几分钟到几小时的数据采集时间。电致发光（EL）和光致发光（PL）成像是硅太阳能电池和硅片非常快速的表征工具，每个样品的数据采集时间为几秒或更短。5,6在参考文献7中提出使用在外部电压控制下拍摄的EL图像和PL图像来测量硅太阳能电池串联电阻的横向变化。还报道了一些初步的定性结果。7,8在此，我们通过发光成像演示了对单晶硅工业丝网印刷硅太阳能电池串联电阻及其横向变化的定量确定。
使用815 nm/25 W的激光拍摄光致发光图像，该激光经扩束后以高达0.67个太阳等效光照强度均匀照射12.5×12.5 cm²的电池区域。使用热电冷却的硅电荷耦合器件相机来捕捉发光图像。对于同时提取电流的PL图像，使用两排十个弹簧加载的接触针均匀接触电池的汇流条。使用市售仪器进行Corescan测量；用校准的工业电池测试仪测量光照IV曲线。
在简化情况下，太阳能电池被描述为平行节点的二维网络，每个节点由局部电阻Rs,i和一个二极管串联组成。Rs,i的值给定为
The fast determination of the spatially resolved series resistance of silicon solar cells from luminescence images is demonstrated. Strong lateral variation of the series resistance determined from luminescence images taken on an industrial screen printed silicon solar cell is confirmed qualitatively by a Corescan measurement and quantitatively by comparison with the total series resistance obtained from the terminal characteristics of the cell. Compared to existing techniques that measure the spatially resolved series resistance, luminescence imaging has the advantage that it is nondestructive and orders of magnitude faster. © 2007 American Institute of Physics. DOI: 10.1063/1.2709630 The series resistance of silicon solar cells often exhibits strong lateral variations, particularly in industrial screen printed cells. Experimental techniques to quantify such variations include Corescan, 1 Cello, 2 and imaging techniques based on dark and illuminated infrared lock-in thermography LIT. 3,4 These techniques require data acquisition times between minutes and several hours per solar cell. Electroluminescence EL and photoluminescence PL imaging are very fast characterization tools for silicon solar cells and silicon wafers, with data acquisition times of a few seconds or less per sample. 5,6 Using EL images and PL images taken with external control of the voltage to measure lateral variations of the series resistance in silicon solar cells was proposed in Ref. 7. Some preliminary qualitative results were also reported. 7,8 Here, we demonstrate a quantitative determination of the series resistance and its lateral variation in a monocrystalline industrial screen printed silicon solar cell by luminescence imaging. Photoluminescence images are taken using an 815 nm/25 W laser that is expanded to illuminate the cell area of 12.512.5 cm 2 homogeneously with up to 0.67 Sun equivalent illumination intensity. A thermoelectrically cooled silicon charge coupled device camera is used to capture luminescence images. For the PL images with simultaneous current extraction, two arrays of ten spring loaded contact pins are used to contact the busbars of the cell homogeneously. A commercially available instrument is used for Corescan measurements; illuminated IV curves are measured with a calibrated industrial cell tester. In a simplified case, a solar cell is described as a twodimensional network of parallel nodes, with each node consisting of a series connection of a local resistor Rs,i and a diode. The value of R s,i is given as