Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
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DOI：
10.7567/jjap.52.05ec01
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发表时间：
2013-05
影响因子：
1.5
通讯作者：
K. Sakaike;Yoshitaka Kobayashi;S. Nakamura;S. Hayashi;M. Akazawa;S. Morisaki;M. Ikeda;S. Higashi
中科院分区：
文献类型：
--
作者：
K. Sakaike;Yoshitaka Kobayashi;S. Nakamura;S. Hayashi;M. Akazawa;S. Morisaki;M. Ikeda;S. Higashi
研究了近红外半导体激光（SDL）辐照非晶硅（a-Si）薄膜的层间转移和同时晶化。在起始石英衬底和反衬底[玻璃和聚（对苯二甲酸乙二醇酯）]上由窄石英柱支撑的a-Si膜面对面接触，并且SDL照射具有半空结构的a-Si膜。在SDL照射后，Si膜完全转移，并在对衬底上同时结晶。原位监测表明，层转移发生在固相或液相中，随后在冷却期间发生相变。高性能的多晶硅薄膜晶体管成功地制作在转移的Si膜，它表现出大于105的高开/关比和场效应迁移率高达268 cm 2 V-1 s-1。
A novel layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films induced by near-infrared semiconductor-diode-laser (SDL) irradiation has been investigated. The a-Si films supported by narrow quartz columns on a starting quartz substrate and a counter substrate [glass and poly(ethylene terephthalate)] were in face-to-face contact, and an SDL irradiated the a-Si films with midair structure. After SDL irradiation, the Si films were completely transferred and crystallized simultaneously on the counter substrates. In-situ monitoring revealed that the layer transfer took place either in the solid phase or the liquid phase followed by phase transformation in the cooling period. High performance polycrystalline Si thin-film transistors were successfully fabricated on the transferred Si films, which showed a high on/off ratio of more than 105 and a field-effect mobility as high as 268 cm2 V-1 s-1.