Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3
Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3
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DOI：
10.1063/1.5044627
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发表时间：
2018-07-30
影响因子：
4
通讯作者：
McCluskey, Matthew D.
中科院分区：
文献类型：
--
作者：
Ritter, Jacob R.;Huso, Jesse;McCluskey, Matthew D.
掺镁氧化镓可用作未来几代功率器件的半绝缘材料。用光谱学和杂化泛函计算研究了提拉法生长的β-Ga2O中的缺陷能级。替代镁掺杂是深度受主，而替位Ir杂质是深度施主。氢化处理的Ga_2O_3：Mg在3492 cm(-1)处有一个红外吸收峰，归属于中性的MgH络合物的O-H键伸展模式。尽管有Ir和Si的补偿以及氢钝化，但高浓度的Mg(10(19)cm(-3))可以将费米能级推向中禁带或更低的能级。由AIP出版公司出版。
Magnesium-doped gallium oxide may he utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown beta-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm(-1), assigned to an O-H bond-stretching mode of a neutral MgH complex. Despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (10(19) cm(-3)) can push the Fermi level to mid-gap or lower. Published by AIP Publishing.