Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum
Comparative study of sputter‐deposited SnO2 films doped with antimony or tantalum
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掺锑、钽溅射沉积 SnO2 薄膜的对比研究
DOI：
10.1002/pssb.201552720
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
A. Klein
中科院分区：
文献类型：
--
作者：
M. Weidner;J. Jia;Y. Shigesato;A. Klein
使用相同的参数，溅射沉积掺杂锑或钽的SnO2薄膜进行比较。研究了掺杂剂浓度和衬底温度等沉积参数的选择对光电性能尤其是薄膜电阻率的影响。对比分析表明，钽掺杂的薄膜电阻率较低，可能是由于锑掺杂时晶界散射的抑制作用增强。据报道，溅射沉积的钽掺杂薄膜的电阻率低于先前的电阻率5.4×10−4 Ω cm，载流子密度4.5×1020 cm−3，迁移率25.7 cm2Vs−1，同时在薄膜厚度400 nm时保持85%以上的透光率。首次合成了Ta/Sb共掺杂薄膜，取得了类似的结果。
SnO2 films doped with antimony or tantalum were sputter‐deposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter‐deposited tantalum‐doped films with lower than previously achieved resistivity 5.4×10−4 Ω cm , carrier density 4.5×1020 cm−3 , and mobility 25.7 cm2Vs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co‐doped thin films were synthesized for the first time, achieving similar results.