Orientation filtering by growth‐velocity competition in zone‐melting recrystallization of silicon on SiO2
Orientation filtering by growth‐velocity competition in zone‐melting recrystallization of silicon on SiO2
复制标题
SiO2 上硅区域熔融再结晶中生长速度竞争的取向过滤
DOI：
10.1063/1.94255
复制
发表时间：
1983
影响因子：
4
通讯作者：
M. Geis
中科院分区：
文献类型：
--
作者：
H. Atwater;C. Thompson;Henry I. Smith;M. Geis
我们描述了一种控制在非晶SiO2上通过区熔再结晶产生的（100）织构硅膜中晶粒的面内方向的方法。具有窄范围内的面内取向的晶粒能够通过由结晶屏障图案组成的取向过滤器生长，而具有其他取向的晶粒被封闭。使用方向滤波器的实验结果，以及优化滤波器性能的参数，报告。
We describe a method of controlling the in‐plane 〈100〉 directions of grains in (100)‐textured silicon films produced by zone‐melting recrystallization over amorphous SiO2. Grains having in‐plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.