Surface planarization and masked ion-beam structuring of YBa2Cu3O7 thin films
Surface planarization and masked ion-beam structuring of YBa2Cu3O7 thin films
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DOI：
10.1016/j.tsf.2010.07.021
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发表时间：
2010-09-30
期刊：
影响因子：
2.1
通讯作者：
Teichert, C.
中科院分区：
文献类型：
--
作者：
Pedarnig, J. D.;Siraj, K.;Teichert, C.
报道了脉冲激光沉积（PLD）法生长的高温超导YBa_2Cu_3O_（7-δ）薄膜的表面平坦化和掩模离子束结构化（MIBS）。化学机械抛光，等离子体蚀刻，和YBCO薄膜的氧气退火强烈降低颗粒密度（类似于10（-2）×）和表面粗糙度（类似于10（-1）×）的PLD层生长。薄膜的电阻率、临界温度T-c接近90 K，临界电流密度J（c）（77 K）> 1 MA/cm（2）。用75个关键能量的He离子对YBCO薄膜进行了辐照改性和图形化。通过MIBS图案化而不去除HIS材料的超导迹线和为了比较，通过湿化学蚀刻图案化的超导迹线显示出相同的T-c和J（c）（T）值。在平坦化的膜上并行地产生不同的微米和纳米图案。照射图案的大小取决于用于光束成形的掩模，并且实现小于70 nm的特征。(C)2010 Elsevier BV保留所有权利。
Surface planarization and masked ion-beam structuring (MIBS) of high-T-c superconducting (HTS) YBa(2)Cu(3)O7-delta(YBCO) thin films grown by pulsed-laser deposition (PLD) method is reported. Chemical-mechanical polishing, plasma etching, and oxygen annealing of YBCO films strongly reduce the particulate density (similar to 10(-2) X) and surface roughness (similar to 10(-1) x) of as-grown PLD layers. The resistivity, critical temperature T-c approximate to 90 K and critical current density J(c) (77 K)> 1 MA/cm(2) of films are not deteriorated by the planarization procedure. The YBCO films are modified and patterned by irradiation with He ions of 75 key energy. Superconducting tracks patterned by MIBS without removal of HIS material and, for comparison, by wet-chemical etching show same T-c and J(c) (T) values. Different micro- and nano-patterns are produced in parallel on planarized films. The size of irradiated pattern depends on the mask employed for beam shaping and features smaller than 70 nm are achieved. (C) 2010 Elsevier B.V. All rights reserved.