Synthesis and Characterization of Porous Platinum Layers Deposited on Highly Doped n-Type Porous Silicon by Immersion Plating
Synthesis and Characterization of Porous Platinum Layers Deposited on Highly Doped n-Type Porous Silicon by Immersion Plating
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DOI：
10.1149/1.2337779
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发表时间：
2006-11
影响因子：
3.9
通讯作者：
J. G. A. Brito-Neto;S. Araki;M. Hayase
中科院分区：
文献类型：
--
作者：
J. G. A. Brito-Neto;S. Araki;M. Hayase
本文报道了在高掺杂（0.007-0.02和0.001-0.003 Ω cm）n型多孔硅上用浸镀法制备多孔铂层的方法及其表征。采用电化学腐蚀法制备了不同形貌的多孔硅样品。通过将多孔样品简单地浸入含HF的六氯铂酸盐溶液中几分钟来进行电镀。扫描电子显微镜显示沉积物达到8 μm的深度。此外，所获得的铂沉积物具有随机孔结构，而原始多孔硅衬底显示出有组织的蜂窝状平行孔阵列。电子探针显微分析测量表明，沉积物具有非常好的深度均匀性，也表明几乎所有的硅原来存在的被铂蚀刻掉。铂沉积物的电化学活性表面积通过循环伏安法测定为约80 m2/cm 3。
In this article, we report on the synthesis and characterization of porous platinum layers on top of highly doped (0.007-0.02 and 0.001-0.003 Ω cm) n-type porous silicon by immersion plating. Porous silicon samples of different morphologies were prepared by electrochemical etching. Plating was performed by simple immersion of the porous samples in HF-containing hexachloroplatinate solutions for some minutes. Scanning electron microscopy showed that the deposits attained up to 8 μm depth. Moreover, the achieved platinum deposits have a random pore structure, whereas the original porous silicon substrates show an organized honeycomb-like parallel pore array. Electron probe microanalysis measurements showed that the deposits have very good in-depth homogeneity, indicating also that almost all silicon originally present was etched away by platinum. The electrochemically active surface area of the platinum deposits was determined to be on the order of 80 m 2 /cm 3 by cyclic voltammetry.