High power AlGaN ultraviolet light emitters
High power AlGaN ultraviolet light emitters
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DOI：
10.1088/0268-1242/29/8/084007
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发表时间：
2014-08-01
影响因子：
1.9
通讯作者：
Gaska, Remis
中科院分区：
文献类型：
--
作者：
Shatalov, Max;Sun, Wenhong;Gaska, Remis
分析了蓝宝石衬底上AlGaN深紫外光(DUV)发光二极管(LED)的外量子效率，讨论了影响DUV发光二极管输出功率的因素。LED的性能关系到器件结构设计的优化和外延材料质量的提高。
We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.