Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
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DOI：
10.1038/s41467-018-07994-1
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发表时间：
2019-01-10
影响因子：
16.6
通讯作者：
Hawrylak, P.
中科院分区：
文献类型：
--
作者：
Jadczak, J.;Bryja, L.;Hawrylak, P.
光子上转换是一种反斯托克斯过程，其中光子的吸收导致光子以高于激发能的能量重新发射。上转换光电发射已经在玻璃、半导体量子阱、纳米带、碳纳米管和原子薄半导体中的稀土原子中得到证实。在这里，我们演示了单层半导体 WS2 中的室温上转换光致发光过程，能量增益高达 150 meV。我们将此过程归因于涉及三重子和许多声子以及自由激子复合物的跃迁。这些结果对于纳米尺度的能量收集、激光制冷和光电子学非常有前景。
Photon upconversion is an anti-Stokes process in which an absorption of a photon leads to a reemission of a photon at an energy higher than the excitation energy. The upconversion photoemission has been already demonstrated in rare earth atoms in glasses, semiconductor quantum wells, nanobelts, carbon nanotubes and atomically thin semiconductors. Here, we demonstrate a room temperature upconversion photoluminescence process in a monolayer semiconductor WS2, with energy gain up to 150 meV. We attribute this process to transitions involving trions and many phonons and free exciton complexes. These results are very promising for energy harvesting, laser refrigeration and optoelectronics at the nanoscale.