H-2-Dependent Carbon Dissolution and Diffusion-Out in Graphene Chemical Vapor Deposition Growth
H-2-Dependent Carbon Dissolution and Diffusion-Out in Graphene Chemical Vapor Deposition Growth
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石墨烯化学气相沉积生长中 H-2 相关的碳溶解和扩散
DOI：
10.1021/acs.jpcc.5b07127
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发表时间：
2015
影响因子：
3.7
通讯作者：
Ruan Haibo
中科院分区：
文献类型：
--
作者：
Hu Baoshan;Jin Yan;Guan Dongjie;Luo Zhengtang;Shang Bo;Fang Qianrui;Ruan Haibo
考虑到H2对石墨烯表面过程的影响已被重点强调，强调H2对金属基底中碳溶解和扩散单元步骤的作用是非常必要的，以构成阐明H2如何影响石墨烯化学气相沉积（CVD）生长的整个难题。在这篇文章中，我们设计了一系列的石墨烯生长实验，通过在铜和钴薄膜的单个单元步骤中引入H2作为比较，由于其独特的固有碳溶解度。我们研究了氢气对金属衬底的晶体结构、表面形貌、化学环境以及石墨烯薄膜的厚度和质量的影响。我们还建立了理论模型，以监测碳和金属原子之间的相互作用有和没有H2。结果表明，H2预溶解抑制了Cu膜中碳的溶解，促进了溶解碳原子的扩散，而Co膜中则相反.
Highlighting the roles of H2on the carbon dissolution and diffusion-out unit steps in the metal substrate is highly imperative to constitute a whole puzzle elucidating how the H2affects the graphene chemical vapor deposition (CVD) growth, taking into account that the effects of H2on the surface process have been intensively emphasized. In this article, we designed a series of graphene growth experiments by introducing the H2in the individual unit step on the Cu and Co films as a comparison due to their distinctively intrinsic carbon solubility. We investigated the effects of H2on the crystallographic structure, surface morphology, and chemical environment of metal substrates, and the thickness and quality of as-grown graphene films. We also established the theoretical models to monitor the interaction between carbon and metal atoms with and without H2. Our results demonstrate that the H2predissolution could suppress the carbon dissolution in the Cu film and enhance the diffusion-out of dissolved carbon atoms, whereas in the Co film the converse would occur.