Densely Integrated Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array
Densely Integrated Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array
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DOI：
10.1109/leos.2002.1159493
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发表时间：
2002-11
影响因子：
1.5
通讯作者：
Akihiro Onomura;M. Arai;T. Kondo;A. Matsutani;T. Miyamoto;F. Koyama
中科院分区：
文献类型：
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作者：
Akihiro Onomura;M. Arai;T. Kondo;A. Matsutani;T. Miyamoto;F. Koyama
采用非平面金属有机物化学气相沉积（MOCVD）技术实现了一种高集成度的多波长GaInAs/GaAs垂直腔面发射激光器（VCSEL）阵列。制作的1 mm长阵列由20个通道VCSEL组成，每个通道之间的间距小至50 µm。根据激光波长与图案宽度的关系，精确设计了每个通道的激光波长。波长间隔在1 nm以内。所有VCSEL均为单模工作，输出功率超过1.2mW，阈值电流为0.52± 0.1mA。
We demonstrated a densely integrated multiple-wavelength GaInAs/GaAs vertical-cavity surface-emitting laser (VCSEL) array using non planar metal-organic chemical vapor deposition (MOCVD). The fabricated 1-mm-long array consists of 20-channel VCSELs and the pitch between each channel is as small as 50 µm. The lasing wavelength of each channel was precisely designed based on the relationship between the lasing wavelength and the pattern width. The wavelength spacing is within 1 nm. All VCSELs exhibited single-mode operation, an output power of over 1.2 mW and a threshold current of 0.52±0.1 mA.