High-Performance Fiber-Shaped Vertical Organic Electrochemical Transistors Patterned by Surface Photolithography
High-Performance Fiber-Shaped Vertical Organic Electrochemical Transistors Patterned by Surface Photolithography
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DOI：
10.1021/acs.chemmater.3c02237
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发表时间：
2023-11
影响因子：
8.6
通讯作者：
Yueheng Zhong;Qicheng Liang;Zhu Chen;Fengming Ye;Maomao Yao;Jingling Zhang;Zhuoqing Yang;Wei Huang;Hengda Sun;Liangliang Feng;Mei-Xiong Zhu;Gang Wang
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文献类型：
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作者：
Yueheng Zhong;Qicheng Liang;Zhu Chen;Fengming Ye;Maomao Yao;Jingling Zhang;Zhuoqing Yang;Wei Huang;Hengda Sun;Liangliang Feng;Mei-Xiong Zhu;Gang Wang
纤维状的有机电化学晶体（OECTs）将纤维的柔韧性和弹性与有机电化学晶体（OECTs）的有利电性能相结合，在可穿戴电子产品中具有巨大的潜力。然而，受目前高度认可的薄膜器件制造技术的限制，在光纤弯曲表面上的电极和半导体通道的微米级图案化能力仍然具有挑战性。此外，高度期望纤维形OECT的明确限定的短通道长度以缩小与平面OECT装置的性能差距。在这项研究中，实现了在纤维表面上的双图案垂直OECT器件（纤维状vOECT）的制造。此外，实现了第一个n型纤维状vOECT和高性能p型纤维状vOECT。纤维状vOECT器件在增强模式下工作，具有显著的最大导通电阻（p型：41.10 mS，n型：2.25 mS）和电流开/关比（1004），以及良好的循环稳定性（超过500次循环后保持90%以上的性能）。此外，通过使用针织和编织织物纹理，互补反相器，NAND和NOR逻辑门集成通过纤维状的vOECT的衍生和展示。这项研究表明，这种方法作为一个通用的平台，用于制造高性能的半导体器件的潜力。
Converging the fibrous flexibility and resilience with the advantageous electrical properties of organic electrochemical transistors (OECTs), fiber-shaped OECTs possess great potential in wearable electronics. However, limited by current highly recognized fabrication techniques for film devices, micrometer-scale patterning capability of electrodes and semiconductor channels on the curved surface of fibers is still challenging. In addition, the well-defined short channel length of fiber-shaped OECTs is highly desired to narrow the performance gap with planar OECT devices. In this study, the fabrication of photopatterned vertical OECT devices on fiber surfaces (fiber-shaped vOECTs) is achieved. Moreover, the first n-type fiber-shaped vOECTs and high-performance p-type fiber-shaped vOECTs are realized. The fiber-shaped vOECT devices work in enhancement mode, with remarkable maximum transconductance (p-type: 41.10 mS, n-type: 2.25 mS) and current on/off ratio (∼104), together with good cycling stability (maintaining over 90% of performance beyond 500 cycles). Furthermore, by using knitting and weaving fabric textures, complementary inverter, NAND and NOR logic gates integrated through fiber-shaped vOECTs are derived and showcased. This study demonstrates the potential of this approach as a universal platform for fabricating high-performance semiconductor devices.