Donor levels of the divacancy-oxygen defect in silicon
Donor levels of the divacancy-oxygen defect in silicon
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DOI：
10.1063/1.4837995
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发表时间：
2014-01
影响因子：
3.2
通讯作者：
V. Markevich;A. Peaker;B. Hamilton;S. Lastovskii;L. Murin
中科院分区：
文献类型：
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作者：
V. Markevich;A. Peaker;B. Hamilton;S. Lastovskii;L. Murin
利用深能级瞬态光谱（DLTS）和高分辨率拉普拉斯DLTS研究了富氧p型硅等时等温退火过程中空位（V2）的消除。用4或6 MeV的电子照射，在晶体中引入了空位。在等时退火30 min后，样品的间隙消失温度范围为225 ~ 300℃。观察到V2的消失与空穴发射活化能分别为0.23 eV和0.08 eV的两个空穴阱的出现之间存在明显的反相关关系。认为这些圈闭分别与氧-氧（V2O）络合物的第一和第二施主能级有关。在所研究的二极管中，V2O中心的第二施主能级的空穴发射发生了显著的电场增强。结果表明，在4 × 103 ~ 1.2 × 104 V/cm的电场范围内，声子辅助下的发射增强与声子辅助下的发射增强有关。
The elimination of divacancies (V2) upon isochronal and isothermal annealing has been studied in oxygen-rich p-type silicon by means of deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS. Divacancies were introduced into the crystals by irradiation with 4 or 6 MeV electrons. The temperature range of the divacancy disappearance was found to be 225-300 °C upon 30 min isochronal annealing in the samples studied. A clear anti-correlation between the disappearance of V2 and the appearance of two hole traps with activation energies for hole emission of 0.23 eV and 0.08 eV was observed. It is argued that these traps are related to the first and second donor levels of the divacancy-oxygen (V2O) complex, respectively. Significant electric field enhancement of the hole emission from the second donor level of the V2O center occurred in the diodes studied. It is shown that in the range of electric field from 4 × 103 to 1.2 × 104 V/cm the emission enhancement is associated with phonon-assisted t...