Effective energy gap of the double-walled carbon nanotubes with field effect transistors ambipolar characteristics
Effective energy gap of the double-walled carbon nanotubes with field effect transistors ambipolar characteristics
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DOI：
10.1063/1.3679639
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发表时间：
2012-01-23
影响因子：
4
通讯作者：
Yajima, Hirofumi
中科院分区：
文献类型：
--
作者：
Morimoto, Takahiro;Kuno, Akihiro;Yajima, Hirofumi
研究了室温和4.2K下具有HfO 2绝缘层的双壁碳纳米管（DWCNT）-场效应晶体管（FET）器件的输运特性。这些器件在沉积HfO 2绝缘层后显示出双极FET特性。双极行为的关断区域对它们的DWCNT直径有明显的依赖性。由低温库仑金刚石测量估算了栅电压和偏置电压的转换因子。使用相同的器件结构和尺寸的所有设备，这些阈值电压的关断区域转换为有效的能隙。这些能隙与理论预测吻合得很好。(C)2012年美国物理学会。[doi 10.1063/1.3679639]
We have investigated the transport property of the double-walled carbon nanotubes (DWCNT)-field effect transistor (FET) devices with HfO2 insulating layers at room temperature and 4.2 K. These devices show the ambipolar FET characteristics after deposition of HfO2 insulating layer. The off-regions of ambipolar behavior have clear dependence on their DWCNT diameter. The conversion factor of gate voltages and bias voltages is estimated from low temperature Coulomb Diamond measurement. Using same device structure and dimensions to all devices, these off-regions of threshold voltage are converted to effective energy gap. These energy gaps are in good agreement with theoretical predictions. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679639]