Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
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DOI：
10.7567/apex.8.113004
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发表时间：
2015-11-01
影响因子：
2.3
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Tahara, Takayuki;Koike, Hayato;Shiraishi, Masashi
我们实验证明了一种Si自旋金属氧化物半导体场效应晶体管（MOSFET），在室温下具有高的源漏电流和自旋信号的开/关比。自旋沟道是非简并n型Si，并且在背栅结构中有效地施加栅极电压允许自旋MOSFET操作。这一成果为Si自旋MOSFET的实用化奠定了基础。(C)2015日本应用物理学会
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way for the practical use of the Si spin MOSFET. (C) 2015 The Japan Society of Applied Physics