Ultrasensitive photodetectors based on monolayer MoS2
Ultrasensitive photodetectors based on monolayer MoS2
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DOI：
10.1038/nnano.2013.100
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发表时间：
2013-07-01
影响因子：
38.3
通讯作者：
Kis, Andras
中科院分区：
文献类型：
--
作者：
Lopez-Sanchez, Oriol;Lembke, Dominik;Kis, Andras
二维材料是一类新兴的新型材料，具有广泛的电学性质和潜在的实际应用前景。虽然石墨烯(1)是研究最充分的二维材料，但单层的其他材料，如绝缘BN(参考。2)和半导体MoS_2(参考文献3，4)或WSe_2(参考文献5，6)作为有前景的场效应晶体管的栅绝缘体和沟道材料正受到越来越多的关注。由于单层MoS_2是量子力学限制(7，9，10)的直接带隙半导体(7，8)，因此它可以应用于直接带隙可以在光激励下产生高吸收系数和高效的电子-空穴对的光电子器件。在这里，我们展示了具有改进的器件迁移率和导通电流的超灵敏单层MoS2光电晶体管。我们的器件在561 nm波长下的最大外部光响应率为880AW(-1)，在400-680 nm范围内具有最大光响应度。随着液体剥离(11-13)和化学气相沉积类生长(14-15)等大规模生产技术的发展，MoS2在基于MoS2的集成电路、光传感、生物医学成像、视频记录和光谱分析等领域显示出重要的应用潜力。
Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene(1) is the most well-studied two-dimensional material, single layers of other materials, such as insulating BN (ref. 2) and semiconducting MoS2 (refs 3,4) or WSe2 (refs 5,6), are gaining increasing attention as promising gate insulators and channel materials for field-effect transistors. Because monolayer MoS2 is a direct-bandgap semiconductor(7,8) due to quantum-mechanical confinement(7,9,10), it could be suitable for applications in optoelectronic devices where the direct bandgap would allow a high absorption coefficient and efficient electron-hole pair generation under photo-excitation. Here, we demonstrate ultrasensitive monolayer MoS2 phototransistors with improved device mobility and ON current. Our devices show a maximum external photoresponsivity of 880 AW(-1) at a wavelength of 561 nm and a photoresponse in the 400-680 nm range. With recent developments in large-scale production techniques such as liquid-scale exfoliation(11-13) and chemical vapour deposition-like growth(14,15), MoS2 shows important potential for applications in MoS2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.