Ultralow effective Gilbert damping and induced orbital moment in strain-engineered FeGe films with Curie temperature exceeding room temperature

Ultralow effective Gilbert damping and induced orbital moment in strain-engineered FeGe films with Curie temperature exceeding room temperature
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居里温度超过室温的应变工程 FeGe 薄膜中的超低有效吉尔伯特阻尼和诱导轨道矩

DOI:
10.1016/j.jmmm.2022.170053
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发表时间:
2022
影响因子:
2.7
通讯作者:
Hauser, Adam J.
Hauser, Adam J.
中科院分区:
材料科学3区
文献类型:
--
作者:
Budhathoki, Sujan;Sapkota, Arjun;Law, Ka Ming;Ranjit, Smriti;Stephen, Gregory M.;Heiman, Don;Jamer, Michelle E.;Mewes, Tim;Hauser, Adam J.

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我们报道了在Ge(111)衬底上应变外延FeGe薄膜的磁性和磁动力学性质,并证实了拉伸应变FeGe薄膜中轨道矩的产生,这在体相和非应变薄膜中是不存在的。面内拉伸应变导致磁相变温度提高到350K,这可能是由于Fe-Fe键长的减小增加了自旋-轨道耦合强度所致。X射线磁性圆二色谱(XMCD)显示,对于厚度为18 nm和72 nm的薄膜,轨道与自旋磁矩之比分别为0.18和0.14,表明原子轨道部分猝灭。在室温下观察到一个很低的有效吉尔伯特衰减参数,αeff=0.003±0.001,这表明应变FeGe可能在自旋电子学中有应用价值。
We report the magnetic and magnetodynamic properties of strained epitaxial FeGe thin films on Ge (111) substrates, and confirm the generation of orbital moment in tensile-strained FeGe not seen in bulk or unstrained films. In-plane tensile strain resulted in an increase of the magnetic transition temperature to 350 K, likely the result of decreased Fe–Fe bond lengths that increase spin–orbit coupling strength. X-ray magnetic circular dichroism (XMCD) shows orbital-to-spin magnetic moment ratios of 0.18 and 0.14 for films of 18 nm and 72 nm thickness, respectively, indicative of partially quenched atomic orbitals. A very low effective Gilbert damping parameter, α e f f= 0.003±0.001 at room temperature was observed, suggesting that strained FeGe could be useful for spintronic applications.
立方 FeGe 中自旋共振的频率和温度依赖性
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