A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices
A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices
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用于高性能电子和光电器件的二维材料的轻松清洁转移的双支撑层
DOI:
10.1021/acsnano.9b00330
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发表时间:
2019
期刊:
影响因子:
17.1
通讯作者:
Ren Wencai
中科院分区:
文献类型:
--
作者:
Zhang Dingdong;Du Jinhong;Hong Yi-Lun;Zhang Weimin;Wang Xiao;Jin Hui;Burn Paul L.;Yu Junsheng;Chen Maolin;Sun Dong-Min;Li Meng;Liu Lianqing;Ma Lai-Peng;Cheng Hui-Ming;Ren Wencai
Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe2and WS2single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe2retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe2. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.