Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures
Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures
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DOI：
10.1063/1.5092872
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发表时间：
2019-06
影响因子：
4
通讯作者：
Xiang Liu;W. Mi;Qiang Zhang;Xi-xiang Zhang
中科院分区：
文献类型：
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作者：
Xiang Liu;W. Mi;Qiang Zhang;Xi-xiang Zhang
用电流源研究了Fe3O4/SiO2/Si异质结构的电子输运和磁输运性质。Fe3O4/SiO2/p-Si异质结构中存在负差分电阻。采用I+ (I−)和V+ (V−)电极接触Fe3O4 （Si）层的测量电路，在异质结构中引入了平面内输运。通过降低温度，平面内导电通道从Fe3O4切换到p-Si。然而，在Fe3O4/SiO2/n-Si异质结构中，面内电流仍然由Fe3O4携带。p-Si中积累层的形成有利于导电通道开关（CCS），而n-Si中的耗尽层则阻碍了CCS。在150 K时，Fe3O4/SiO2/p-Si异质结构中的磁电阻（MR）在p-Si的空间电荷区显示出导电通道。在磁场重塑的梯形空间电荷区中，由增加的电子散射产生正磁流变。用电流源研究了Fe3O4/SiO2/Si异质结构的电子输运和磁输运性质。Fe3O4/SiO2/p-Si异质结构中存在负差分电阻。采用I+ (I−)和V+ (V−)电极接触Fe3O4 （Si）层的测量电路，在异质结构中引入了平面内输运。通过降低温度，平面内导电通道从Fe3O4切换到p-Si。然而，在Fe3O4/SiO2/n-Si异质结构中，面内电流仍然由Fe3O4携带。p-Si中积累层的形成有利于导电通道开关（CCS），而n-Si中的耗尽层则阻碍了CCS。在150 K时，Fe3O4/SiO2/p-Si异质结构中的磁电阻（MR）在p-Si的空间电荷区显示出导电通道。在磁场h重塑的梯形空间电荷区，电子散射增加产生正磁流变。
The electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I−) and V+ (V−) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.The electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I−) and V+ (V−) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field h...