Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films
Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films
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DOI：
10.1016/s0924-4247(99)00070-9
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发表时间：
1999-10-12
影响因子：
4.6
通讯作者：
Muralt, P
中科院分区：
文献类型：
--
作者：
Dubois, MA;Muralt, P
在各种锆钛酸铅 (PZT) 和氮化铝薄膜上测量了有效压电横向系数 e(31,f)。测量装置基于对涂有压电材料的硅悬臂梁的强制偏转产生的电荷的收集。最大值由 PZT 的四方晶系组合物（Zr/Ti 比为 45/55）获得，等于 8.3 C/m(2)。 ALN 层表现出根据单晶数据计算的理论值的 97%，即 e(31,f)- = 1.02 C/m(2) (C) 1999 Elsevier Science S.A. 保留所有权利。
The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of a Si cantilever coated with a piezoelectric material. The maximum value was obtained from a tetragonal composition of PZT (45/55 Zr/Ti ratio) and was equal to 8.3 C/m(2). The ALN layer exhibited 97% of the theoretical value calculated from single crystal data, i.e., e(31,f)- = 1.02 C/m(2) (C) 1999 Elsevier Science S.A. All rights reserved.