Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride
Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride
复制标题
六方氮化硼上选择性生长共价有机骨架超薄膜
DOI：
10.1021/acs.jpcc.6b04410
复制
发表时间：
2016
影响因子：
3.7
通讯作者：
Wang Dong
中科院分区：
文献类型：
--
作者：
Sun Bing;Li Jing;Dong Wei-Long;Wu Mei-Ling;Wang Dong
将有趣的共价有机框架（COF）结合到器件中并发挥其先进的电子特性仍然具有挑战性。本文首次在介质六方氮化硼（hBN）上直接生长了二维全共轭COF超薄膜，并研究了π共轭COF薄膜的载流子输运特性。在优化的溶剂热条件下，选择性地在机械剥离的hBN薄片上制备了四（对氨基苯基）卟啉和对苯二甲酸共价连接的低层COF-366薄膜。在hBN衬底上制备的COF-366薄膜，其吸收边红移，带隙减小。基于COF-366超薄膜的有机场效应晶体管器件具有p型电流调制，开关比为105，迁移率为0.015 cm2 V-1 s-1。本研究为在介质表面生长COF薄膜提供了一种通用的方法，同时也为研究…
Incorporating the intriguing covalent organic framework (COF) into devices and performing their advanced electronic nature are still challenging. Herein, we demonstrate the direct growth of 2D full-conjugated COF ultrathin films on dielectric hexagonal boron nitride (hBN) for the first time and study the carrier transporting characteristics of π-conjugated COF films. Under the optimized solvothermal conditions, few-layered COF-366 films with the covalent connection of tetra(p-aminophenyl)porphyrin and terephthalaldehyde are selectively fabricated on mechanically exfoliated hBN flakes. COF-366 films on hBN substrate present red-shift absorption edge and decreased band gap compared to the bulk COF powders. The organic field-effect transistor device based on COF-366 ultrathin films demonstrates p-type current modulation with an on/off ratio of 105 and mobility of 0.015 cm2 V–1 s–1. The present work represents a universal method for COF film growth on dielectric surface and also provides important insight int...