Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
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DOI：
10.1063/1.2834852
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发表时间：
2008-01-14
影响因子：
4
通讯作者：
Tsai, Ming-Jinn
中科院分区：
文献类型：
--
作者：
Chang, Wen-Yuan;Lai, Yen-Chao;Tsai, Ming-Jinn
采用射频磁控溅射技术在室温下制备了高度(002)择优取向的柱状晶结构的氧化锌薄膜。该器件具有可逆稳定的双稳态电阻开关行为，且电阻态和开关电压的离散性较小。只需要一个较低的形成电场就可以感应出阻性开关特性。在100个循环内，高阻态与低阻态的阻值比在3-4个数量级范围内。研究还发现，主导低阻态和高阻态的导电机制分别是欧姆行为和Poole-Frenkel发射。(C)2008年美国物理研究所。
Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt/ZnO/Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3-4 orders of magnitude within 100 cycles of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively. (c) 2008 American Institute of Physics.