Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
复制标题
直接在Si上生长的室温连续波电泵浦InGaN/GaN量子阱蓝色激光二极管
DOI：
10.1038/s41377-018-0008-y
复制
发表时间：
2018-06-13
影响因子：
19.4
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Sun, Yi;Zhou, Kun;Yang, Hui
目前基于激光的显示和照明应用总是使用在独立的GaN衬底上生长的蓝色激光二极管(LDS)，与其他衬底材料相比，这种衬底成本较高且尺寸更小。(1-3)利用价格较低且直径较大的Si衬底用于异质外延生长氮化铟/氮化镓(InGaN/GaN)多量子阱(MQW)结构可以显著降低蓝色激光二极管的成本，促进其应用。为了在Si衬底上获得高结晶质量的无裂纹GaN薄膜，以便后续生长蓝光结构，在GaN和Si衬底之间插入Al组分阶梯状AlN/AlxGa1-xN缓冲层，形成了握手结构。通过在生长GaN量子垒的过程中引入氢和降低p型AlGaN/GaN超晶格光学包层的生长温度，成功地抑制了InGaN/GaN蓝多量子阱的热退化，消除了富铟团簇。在室温(RT)下，成功地实现了电泵浦InGaN/GaN蓝光(450 Nm)半导体激光器，阈值电流密度为7.8kA/cm(2)。
Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.(1-3) Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1-xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm(2)