Effect of Ar pressure on grain size of magnetron sputter-deposited Cu thin films
Effect of Ar pressure on grain size of magnetron sputter-deposited Cu thin films
复制标题
Ar压力对磁控溅射沉积Cu薄膜晶粒尺寸的影响
DOI：
10.1049/iet-smt:20060110
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发表时间：
2007
影响因子：
1.4
通讯作者：
B. Teo
中科院分区：
文献类型：
--
作者：
Kah;B. Teo
采用直流磁控溅射法在p型硅衬底上制备了厚度为300 ~ 425 nm的铜薄膜。采用X射线衍射（XRD）和卡尔苏斯四探针分别研究了薄膜的结晶度和电导率随沉积过程中氩气压力的变化。通过对薄膜XRD图谱的分析发现，低Ar气压下Cu薄膜的结晶度提高，晶粒尺寸增大，这一结论可由Scherrer公式推导出。铜膜的电性能行为符合晶粒尺寸随Ar气压变化的趋势，其中铜膜的电导率随Ar气压的升高而降低。作者将这些现象归因于生长表面上的吸附原子的退化的表面扩散机制，在溅射沉积过程中随着Ar压力的增加。
Copper (Cu) thin films with thicknesses ranging from 300 to 425 nm were prepared at various argon (Ar) pressures on p-type silicon substrates by direct current magnetron sputtering deposition. X-ray diffraction (XRD) and Karl Suss four-point probe were employed to study the film crystallinity and conductivity, respectively, as a function of Ar pressure in the deposition process. Detailed analysis on the XRD patterns shows that low Ar pressure enhances the Cu film crystallinity with larger grain size, which was deduced using Scherrer's formula. The behaviour of the electrical property of the Cu films complies with the trend of the grain size with Ar pressure, in which the film conductivity decreases with increasing Ar pressure. The authors attribute these phenomena to the degraded surface diffusion mechanism of the adatom on the growing surface, with increasing Ar pressure during the sputtering deposition process.