Direct calculation of the HBT equivalent circuit from measured S-parameters
Direct calculation of the HBT equivalent circuit from measured S-parameters
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根据测量的 S 参数直接计算 HBT 等效电路
DOI：
10.1109/mwsym.1992.188090
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
D. Pavlidis
中科院分区：
文献类型：
--
作者：
D. Pehlke;D. Pavlidis
提出了一种根据测量的s参数直接计算异质结双极晶体管等效电路的新方法。用这种方法得到解析推导而不是拟合的解。无需使用特殊的测试结构或额外的测量步骤，即可计算外在和内在元素值。讨论了基极电阻、集电极电阻、基极-集电极电容、基极传输因子以及基极和集电极传输时间的偏置相关结果
A new approach for directly calculating the heterojunction bipolar transistor (HBT) equivalent circuit from measured S-parameters is presented. Analytically derived rather than fitted solutions are obtained in this way. Extrinsic as well as intrinsic element values are computed without the use of special test structures or additional measurement steps. Bias-dependent results for base resistance, collector resistance, base-collector capacitance, base transport factor, and base and collector transit times are discussed.<<ETX>>