Current saturation in submillimeter-wave varactors
Current saturation in submillimeter-wave varactors
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DOI：
10.1109/22.137387
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发表时间：
1992-05
影响因子：
4.3
通讯作者：
E. Kolberg;T. Tolmunen;M. Frerking;J. East
中科院分区：
文献类型：
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作者：
E. Kolberg;T. Tolmunen;M. Frerking;J. East
在半导体器件中，电子的速度不能超过一定的限度。这种现象将影响变容二极管乘法器以及其他高频器件，其中通过器件有源部分的RF电流主要是位移电流。因此，在某个点处，预期变容二极管输出功率的“饱和”。作者讨论了这种现象的一些细节，并表明，它严重恶化的乘法器性能在较高的频率。单势垒变容二极管（SBV）应该比GaAs肖特基二极管变容二极管具有优势，因为它们可以在InAs上制造并以串联阵列堆叠，从而允许更低的电流密度和更高的功率处理。>
In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high-frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, at some point, 'saturation' of the varactor output power is expected. The authors discuss this phenomenon in some detail and show that it severely deteriorates the multiplier performance at higher frequencies. Single barrier varactors (SBVs) should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling. >