Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
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双诱导电子浓度增强导致 InAs 薄膜中的光致发光蓝移和展宽
DOI：
10.1002/pssb.201800694
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发表时间：
2019
影响因子：
1.6
通讯作者：
Shao Jun
中科院分区：
文献类型：
--
作者：
Chen Xiren;Zhao Huan;Wu Xiaoyan;Wang Lijuan;Zhu Liangqing;Song Yuxin;Wang Shumin;Shao Jun
对不同 Bi 通量水平的 GaAs 衬底上分子束外延生长的 InAs 薄膜进行光致发光 (PL) 研究。随着 Bi/As 通量比的增加，发现 PL 峰蓝移并伴随线宽展宽，这与常见的 Bi 等电子结合或表面活性剂效应相反。通过详细的线形分析和磁场中 PL 峰分裂的证据，可以看出，这是由于 Bi 通量引起的电子浓度增强所致。评估了 InAs 薄膜中的电子浓度，随着 Bi/As 通量比从 0 上升到 1 × 10−3，电子浓度增加了约 5 倍。 PL 光谱的温度依赖性表明，在具有高 Bi/As 通量比的 InAs 薄膜中，载流子重新分布增强，而载流子声子 Fröhlich 散射减弱。这些发现揭示了电子浓度增强的新型 Bi 效应，并有助于了解 Bi 在 III-V 族半导体中的基础知识。
Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5‐fold enhanced as Bi/As flux ratio rises up from 0 to 1 × 10−3. The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier–phonon Fröhlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III–V semiconductors.