Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
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通过同质外延 p-GaN 层中的 Mg 掺杂控制反转沟道 MOS 特性
DOI：
10.7567/apex.10.121004
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发表时间：
2017
影响因子：
2.3
通讯作者：
K. Nakagawa
中科院分区：
文献类型：
--
作者：
S. Takashima;K. Ueno;H. Matsuyama;Takuro Inamoto;M. Edo;Tokio Takahashi;M. Shimizu;K. Nakagawa
在同质外延p-GaN层上制备了不同Mg掺杂浓度（[Mg]）的横向GaN MOSFET，研究了[Mg]对MOS沟道特性的影响。结果表明，[Mg]可以沿着理论曲线控制阈值电压（Vth）。场效应迁移率也表现出[Mg]依赖性，在[Mg] = 6.5 × 1016 cm-3且Vth = 3.0 V的层上实现了123 cm 2 V-1 s-1的最大场效应迁移率。所获得的结果表明，GaN MOSFET可以基于p-GaN层的掺杂浓度进行设计，具有实现功率MOSFET的有希望的特性。
Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage (Vth) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm2 V−1 s−1 is achieved on [Mg] = 6.5 × 1016 cm−3 layer with Vth = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.