Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
复制标题
原子薄过渡金属二硫属化物合金的可调谐带隙光致发光
DOI：
10.1021/nn401420h
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发表时间：
2013-05-01
期刊：
影响因子：
17.1
通讯作者：
Xie, Liming
中科院分区：
文献类型：
--
作者：
Chen, Yanfeng;Xi, Jinyang;Xie, Liming
原子级薄二维材料的带隙工程是其在纳米电子学、光电子学和光子学中应用的关键。在这里，我们第一次证明，在二维系统中，通过合金化两种材料具有不同的带隙（MoS 2和WS 2），可以在二维合金（Mo 1-xWxS 2单层，x = 0-1）中获得可调的带隙。原子分辨率扫描透射电子显微镜揭示了Mo和W原子在Mo 1-xWxS 2单层合金中的随机排列。光致发光特性已显示可调谐带隙发射从1.82 eV（在x = 0.20处达到）连续调谐到1.99 eV（在x= 1处达到）。此外，密度泛函理论计算已经进行了理解的组成依赖的电子结构的Mo 1-xWxS 2单层合金。
Band gap engineering of atomically thin two-dimensional (2D) materials is the key to their applications in nanoelectronics, optoelectronlcs, and photonics. Here, for the first time, we demonstrate that in the 2D system, by alloying two materials with different band gaps (MoS2 and WS2), tunable band gap can be obtained in the 2D alloys (Mo1-xWxS2 monolayers, x = 0-1). Atomic-resolution scanning transmission electron microscopy has revealed random arrangement of Mo and W atoms In the Mo1-xWxS2 monolayer alloys. Photoluminescence characterization has shown tunable band gap emission continuously tuned from 1.82 eV (reached at x = 0.20) to 1.99 eV (reached at x= 1). Further, density functional theory calculations have been carried out to understand the composition-dependent electronic structures of Mo1-xWxS2 monolayer alloys.