FSM Inspired Unconventional Hardware Watermark Using Field-Assisted SOT-MTJ
FSM Inspired Unconventional Hardware Watermark Using Field-Assisted SOT-MTJ
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DOI：
10.1109/access.2023.3238807
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发表时间：
2023-01-01
期刊：
影响因子：
3.9
通讯作者：
Massoud, Yehia
中科院分区：
文献类型：
--
作者：
Divyanshu, Divyanshu;Kumar, Rajat;Massoud, Yehia
集成电路供应链的全球化增加了来自参与这一过程的不可信实体的威胁。逻辑锁定、水印和分割制造等机制被广泛用于确保硬件安全。该研究描述了一种受有限状态机启发创建硬件水印的新方法。它利用了基于自旋轨道扭矩的磁性隧道结的独特物理特性。详细描述了设计策略，包括使用EDA工具来分析和利用MTJ的独特开关特性、它们的非易失性以及它们对外部磁场的依赖，以类似于FSM的方式通过预定的状态顺序引导信息。此外，还利用蒙特卡罗模拟对性能前景进行了分析。对于关键MTJ参数的5%和10%的工艺变化，分别达到了100%和99.80%的精度。在控制信号电压变化方面，误差为9%(0.91V)。所需的状态转变没有改变，表现出对从250K到350K的温度变化的可容忍的敏感性。最后，与其他基于有限状态机的水印算法进行了比较。
The globalization of the Integrated Circuits supply chain has increased threats from untrusted entities involved in the process. Several mechanisms, such as logic locking, watermarking and split manufacturing, are widely used to ensure hardware security. This study describes a novel method for creating hardware watermarks inspired by finite-state machines. It makes use of the unique physical property of magnetic tunnel junctions that are based on spin-orbit torque. The design strategy is described in detail, including the use of an EDA tool to analyze and take advantage of the unique switching properties of MTJ, their non-volatility, and their reliance on an external magnetic field to direct information through a predetermined order of states in a manner akin to an FSM. Furthermore, the performance prospects are analyzed using Monte Carlo simulations. For the 5% and 10% of process variation in the key MTJ parameters, the accuracy of 100% and 99.80%, respectively, are achieved. In control signal voltage variation, a tolerance of 9% (0.91V) is observed. The required state transition is not altered, demonstrating a tolerable sensitivity to temperature variation from 250K to 350K. The security aspects and methodology for the approach are explained to ensure a more robust and practical application, and finally, a comparison is made with other FSM-based watermarks.