Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?
Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?
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用于极紫外的衰减相移掩模：它们可以减轻三维掩模效应吗？
DOI：
10.1117/1.jmm.18.1.011005
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Markus Bauer
中科院分区：
文献类型：
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作者：
A. Erdmann;P. Evanschitzky;H. Mesilhy;V. Philipsen;E. Hendrickx;Markus Bauer
抽象的。理解、表征和减轻三维（3-D）掩模效应（包括远心误差、对比度衰减和最佳聚焦偏移）对于未来极紫外（EUV）投影系统和掩模设计的性能优化变得越来越重要。我们探讨了衰减相移掩模（attPSM）的潜力，以减轻3-D掩模的影响，并利用它们为未来的EUV成像。光在吸收体边缘的散射导致显著的相位变形，这影响用于EUV的attPSM的有效相位和光刻性能。严格的掩模和成像模拟结合多目标优化技术，以确定最合适的材料特性，掩模，和源的几何形状。所得的成像性能相比，可实现的性能的二元EUV掩模。
Abstract. The understanding, characterization, and mitigation of three-dimensional (3-D) mask effects including telecentricity errors, contrast fading, and best focus shifts become increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. We explore the potential of attenuated phase shift mask (attPSM) to mitigate 3-D mask effects and exploit them for future EUV imaging. The scattering of light at the absorber edges results in significant phase deformations, which impact the effective phase and the lithographic performance of attPSM for EUV. Rigorous mask and imaging simulations in combination with multiobjective optimization techniques are employed to identify the most appropriate material properties, mask, and source geometries. The resulting imaging performance is compared to the achievable performance of binary EUV masks.