Intrinsic magnetic refrigeration of a single electron transistor
Intrinsic magnetic refrigeration of a single electron transistor
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DOI：
10.1063/1.4941289
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发表时间：
2016-02-01
影响因子：
4
通讯作者：
Ferguson, A. J.
中科院分区：
文献类型：
--
作者：
Ciccarelli, C.;Campion, R. P.;Ferguson, A. J.
在这项工作中，我们表明，掺杂低浓度的磁性杂质的铝可以用来制造具有内在冷却能力的量子器件。我们制造单电子晶体管由铝掺杂2%锰通过使用一个标准的多角度蒸发技术，并表明，用于制造设备的金属量产生足够的冷却功率，以实现在我们的低温恒温器的基础温度（300 mK）的电子温度下降160 mK。冷却机制是基于磁热效应从稀释Mn时刻。(C)2016 AIP Publishing LLC.
In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments. (C) 2016 AIP Publishing LLC.