Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions
Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions
复制标题
各种溅射条件下高温退火后结晶AlN/蓝宝石模板的综合研究
DOI：
10.1088/1674-4926/41/12/122802
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发表时间：
2020-12-01
影响因子：
5.1
通讯作者：
Yan, Jianchang
中科院分区：
文献类型：
--
作者：
Gu, Wen;Liu, Zhibin;Yan, Jianchang
采用溅射和高温退火相结合的方法制备了高质量的AlN/蓝宝石模板。研究了氮通量、射频功率和衬底温度等溅射参数对退火AlN薄膜结晶质量和表面形貌的影响。在较低的衬底温度、较低的功率和较低的N-2通量下，经过高温退火后，AlN（0002）和AlN (10 (1) / bar2的x射线摇摆曲线的半最大值全宽度分别提高到97.2和259.2 arcsec。这是因为在高温退火过程中，溅射AlN薄膜空位浓度的增加可以通过提高恢复速率来促进位错的湮灭。在优化的溅射条件下，可以清晰地观察到阶梯和阶梯聚束的形貌。
High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature (HT) annealing. The influence of sputtering parameters including nitrogen flux, radio frequency power, and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were investigated. With lower substrate temperature, lower power, and lower N-2 flux, the full width at half maximum of the X-ray rocking curve for AlN (0002) and (10 (1) over bar2) were improved to 97.2 and 259.2 arcsec after high-temperature annealing. This happens because the increased vacancy concentration of sputtered AlN films can facilitate the annihilation of dislocations by increasing the recovery rate during HT annealing. Step and step-bunching morphologies were clearly observed with optimized sputtering conditions.